Let’s understand the Difference Between BJT and MOSFET. Bipolar Junction Transistors (BJTs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are two fundamental types of transistors used in electronic circuits. They have several key differences in terms of their structure, operation, and applications: What is BJT? A Bipolar Junction Transistor (BJT) is a semiconductor device used for amplification […]
Transistors
JFET Junction Field Effect Transistors Working and Applications
Among the various types of transistors, the Junction Field Effect Transistors in short JFETs holds a distinctive place due to its unique operational characteristics and versatile applications. What is a JFET? A Junction Field Effect Transistor (JFET) is a type of field-effect transistor (FET) that utilizes an electric field to control the flow of current. Unlike […]
Simple IGBT Based Induction Heater Circuit and its Working
An induction heater circuit is a type of device used to heat conductive materials by inducing electromagnetic currents within the material. These heaters are commonly used in industrial applications for processes such as metal melting, forging, brazing, and heat treatment. They work based on the principles of electromagnetic induction discovered by Michael Faraday. Induction Heater […]
What is Scaling of MOSFET, Scaling Factor, and Types of Scaling
Scaling of MOSFET means, the Reduction of scales from something, Hey! Friends let us first understand what is the basic idea behind the scaling of MOSFET? Scaling is one of the best ways to increase the performance of the Metal Oxide Semiconductor Field Effect Transistors (MOSFET). In scaling we reduced some critical parameters of the […]
MOSFET VI Characteristics, Symbol and it’s Classification
MOSFET Full Form is Metal Oxide Semiconductor Field Effect Transistor. Here we will be discussing MOSFET VI Characteristics, symbol and its classification. They are broadly classified into two types namely enhancement Type and depletion type MOSFET. In an enhancement type MOSFET channel has to be induced for the device to conduct, which is achieved by […]
VI Characteristics of IGBT and it’s Working Principle
The VI characteristics of IGBT is as shown in Figure. In the forward direction, they are similar to those of bipolar transistors. The only difference here is that the controlling parameter is the gate to source voltage Vgs and the parameter being controlled is the drain current. The working principle of IGBT is based on […]